INVESTIGATION OF THE PROPERTIES OF Ge1-x Snx SEMICONDUCTOR SOLID MIXING ZONE STRUCTURE

Authors

  • Jumaniyozova Darmonjon Ro‘Zmetovna O‘Zbekiston Respublikasi Oliy Ta’lim, Fan Va Innovatsiyalar Vazirligi Xorazm Viloyati Abu Rayhon Beruniy Nomidagi Urganch Davlat Universiteti Fizika-matematika fakulteti 70530901– Fizika (yo‘nalishlar bo‘yicha) 2-kurs magistranti

Abstract

Currently, the fields of nanoelectronics, optoelectronics and photonics are developing rapidly. In these areas, the creation of effective working materials is an important task. Traditional Si&Ge based semiconductors are not suitable for photonics because they have an indirect energy gap.

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Published

2025-05-31

Issue

Vol. 40 (2025)

Section

Articles

How to Cite

INVESTIGATION OF THE PROPERTIES OF Ge1-x Snx SEMICONDUCTOR SOLID MIXING ZONE STRUCTURE. (2025). American Journal of Interdisciplinary Research and Development, 40, 76-84. https://ajird.journalspark.org/index.php/ajird/article/view/1566