INVESTIGATION OF THE PROPERTIES OF Ge1-x Snx SEMICONDUCTOR SOLID MIXING ZONE STRUCTURE
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Abstract
Currently, the fields of nanoelectronics, optoelectronics and photonics are developing rapidly. In these areas, the creation of effective working materials is an important task. Traditional Si&Ge based semiconductors are not suitable for photonics because they have an indirect energy gap.
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Jumaniyozova Darmonjon Ro‘Zmetovna. (2025). INVESTIGATION OF THE PROPERTIES OF Ge1-x Snx SEMICONDUCTOR SOLID MIXING ZONE STRUCTURE. American Journal of Interdisciplinary Research and Development, 40, 76–84. Retrieved from https://ajird.journalspark.org/index.php/ajird/article/view/1566
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